Ir25750lpbf datasheet

PRELIMINARY IRFP9140N HEXFET® Power MOSFET PD - 9.1492A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides ...

Data Sheet No. PD60017 Rev.Q www.irf.com 1 (Refer to Lead Assignments for correct pin configura-tion). This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout. 8-Lead PDIP 16-Lead SOIC (Wide Body) General Description Product Summary VDS ID (at V GS =10V) 40A R DS(ON) (at V GS =10V) < 7.5mΩ R DS(ON) (at V GS = 4.5V) < 10.5mΩ 100% UIS Tested 100% R g Tested Symbol VDS • The AON7400A combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is suitable for use as a

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IR25750LPBF - 600 V Surface Mount Novel Current Sensing IC - SOT-23-5 Future Electronics IR3710MTRPBF Page 2 of 20 www.irf.com IR Confidential 4/26/10 Fix Gate Voltage Application Circuit: IR3710 BOOT UGATE PHASE LGATE EN FB PVCC PGND FF ISET VCC SS GND FCCM PGOOD CPO V5 V3.3 R FF R ISET C SS C BOOT C OUT L R 1 R 2 D BOOT V IN V OUT 6.2k 10k NC 3.3V Input Voltage Application Circuit: V OUT IR3710 BOOT UGATE PHASE LGATE EN FB PVCC ...