IRF530 MOSFET are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for IRF530 MOSFET.
They arehoused in the SOT–323/SC–70 which is designed for low power surface mountapplications.MAXIMUM RATINGSRatingSymbol datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes and other semiconductors. 2N3904 / MMBT3904 / PZT3904. Typical Characteristics. Base-Emitter ON Voltage vs Collector Current. 0.1 1 10 100 0.2 0.4 0.6 0.8 1 V - BASE-EMITTER ON VOLTAGE (V) I - COLLECTOR CURRENT (mA) N) C. V = 5V. CE 25 °C 125 °C - 40 °C. NPN General Purpose Amplifier (continued) Base-Emitter Saturation Voltage vs Collector Current . 0.1 1 10 100 0.4 0.6 0.8 1
NPN switching transistor 2N3904 DATA SHEET STATUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published.
2N3391 Datasheet (PDF) 1.1. 2n3390 2n3391 2n3391a 2n3392 2n3393.pdf Size:296K _fairchild_semi. Discrete POWER & Signal Technologies 2N3390 2N3391 2N3391A 2N3392 2N3393 B TO-92 C E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. 2N3904 MMBT390 4. MMPQ390 4 PZT3904. NPN General Purpose Amplifier. This device is designed as a general purpose amplif ier and switch. The useful dynamic range extends to 100 mA as a swi tch and to. 100 MHz as an amplifier. Sourced from Process 23.