Irf3710s datasheet

Offer IRF3710S IOR from Kynix Semiconductor Hong Kong Limited.FETs - Single

8 www.irf.com Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market.

IRF3710S IRF3710L HEXFET ... IRF3710S TO-262 IRF3710L. 2 www.irf.com S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol SEMICONDUCTOR IRF3710 TECHNICAL DATA N-Channel Power MOSFET (100V/59A) Purpose Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products Feature Low RDS(on),low gate charge,low Crss,fast switching IRF3710S IRF3710L HEXFET ... IRF3710S TO-262 IRF3710L. 2 www.irf.com S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol IRF3205 2 www.irf.com S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse

IRF3710 Datasheet (PDF) 1.1. irf3710zlpbf irf3710zpbf irf3710zspbf.pdf Size:382K _international_rectifier PD - 95466A IRF3710ZPbF IRF3710ZSPbF Features IRF3710ZLPbF Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature D VDSS = 100V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 18mΩ G ...